Abstract
The effect of interface barrier, curing temperature, and polarization on the charge transport in regioregular poly(3-hexyl-thiophene) (RR-P3HT) has been investigated in the hole only ITO/poly(ethylene-dioxy-thiophene):polystyrenesulphonate(PEDOT:PSS)/RR-P3HT/Au diode structure. Incorporation of PEDOT:PSS interface layer enhances hole injection into RR-P3HT and switches the conduction from ohmic to space charge limited. Curing temperature ∼120°C was found optimum for RR-P3HT where the intrinsic defects are minimum. The polarization effect in RR-P3HT results in making traps shallower, i.e., the characteristic trap depth reduces from 39to23meV. Hole transport through RR-P3HT has been explained by trap model with traps distributed exponentially in energy space.
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