Abstract
Single layer of In0.5Ga0.5As quantum dots (QDs) was grown using self‐assembled Stranski‐Krastanow on a thin InxGa1−xAs underlying layer and on a reference GaAs wafer by metal‐organic chemical vapour deposition (MOCVD). The effect of different indium composition in the underlying layer and the duration of arsine (AsH3) flow during cooling‐down period of the growth process were investigated and characterized using atomic force microscopy (AFM). The growth of the thin underlying layer has significant influence on the formation of the QDs on the top surface. The dots density increases with increasing indium composition in the underlying layer. AsH3 flow during the period was found to influence the nucleation process of In0.5Ga0.5As QDs. A shorter period of AsH3 flow promotes smaller dots size and therefore increases the dots density.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
