Abstract
Indium phosphide (InP) is one of the most promising materials for applications in high speed and optoelectronic devices. Indium phosphide presents a high mobility and large band gap. However, the elaboration of InP components shows problems in the technology [L. Bideux, B. Gruzza, A. Porte, Surf. Interf. Anal. 20 (1993) 803–807; G. Hollinger, J. Appl. Phys. 67 (1990) 4173], because phosphorus is very volatile. Before the deposition of insulator and metal, InP surface is treated and well passive to get optimal conditions for the elaboration of electronic structure. We have shown that InSb buffer can reduce the phosphorus atoms migration and the defects at the interface [L. Bideux, C. Robert, B. Gruzza, V. Matolin, Z. Benamara, Surf. Sci. 352–354 (1996) 407–410]. After the elaboration of Au/InP, Au/InSb:InP, Al 2O 3/InP and Al 2O 3/InSb:InP structures, we have studied and characterized electrically these structures. The results obtained show clearly the reduction of the defects in the structures protected by InSb buffer layer and no treated surface compared with the InP ones.
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