Abstract
Indium phosphide (InP) is a promising semiconductor used as a basic substrate for micro and optoelectronic devices. However, its use to form components on III–V substrates has provided some technical problems (Bideux L et al. Surf Interface Anal 1993;20:803–7; Hollinger G. J Appl Phys 1990;67:4173). Also, the InP surface must be treated and well passivated before the deposition of the insulator. We show here that the InSb layer can reduce the phosphorus atoms migration. In the Al 2O 3:InSb/InP structure, the electrical C( V) characteristics plotted at 1 MHz give, in the depletion region, a more mushed slope of the curves. The obtained results show clearly the reduction of the defects and consequently, the state density has been decreased by 30% when compared to the InP protected by an InSb buffer layer to non-treated surfaces. The interfacial state density N SS is found to be 6×10 11 eV −1 cm −2.
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