Abstract
The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is the effect of diffusion suppression relating to impurities or point defects from the carbon-doped layer. The InGaN/GaN SL was used as a channel layer to improve the mobility and concentration of the two-dimensional channel electron gas. It was found that by inserting the InGaN/GaN SL just above a C-doped semi-insulating GaN layer as the InGaN underlayer, the conduction current of the SL with five periods (5SL) was observed to be much higher than that of the conventional material with a GaN channel layer of over 2 μm in thickness. The results demonstrated that this SL layer is effective in suppressing the diffusion of impurities or point defects originating from the carbon-doped layer, resulting in the device performance improvement.
Highlights
INTRODUCTIONThe AlGaN/GaN high electron mobility transistor (HEMT) was found to hold great promise for high-power, highfrequency electronics applications, owing to its high breakdown voltage and high saturation current. This HEMT is operated using a high density two-dimensional electron gas (2DEG) at the AlGaN/GaN interface without the need for any doping due to the spontaneous polarization and piezoelectric properties of this group III nitride heterojunction
The AlGaN/GaN high electron mobility transistor (HEMT) was found to hold great promise for high-power, highfrequency electronics applications, owing to its high breakdown voltage and high saturation current.1,2 This HEMT is operated using a high density two-dimensional electron gas (2DEG) at the AlGaN/GaN interface without the need for any doping due to the spontaneous polarization and piezoelectric properties of this group III nitride heterojunction.3–9This HEMT requires a highly resistive buffer layer or substrate for isolation to attain a high-frequency and high-power operation
The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is the effect of diffusion suppression relating to impurities or point defects from the carbon-doped layer
Summary
The AlGaN/GaN high electron mobility transistor (HEMT) was found to hold great promise for high-power, highfrequency electronics applications, owing to its high breakdown voltage and high saturation current. This HEMT is operated using a high density two-dimensional electron gas (2DEG) at the AlGaN/GaN interface without the need for any doping due to the spontaneous polarization and piezoelectric properties of this group III nitride heterojunction.. The AlGaN/GaN high electron mobility transistor (HEMT) was found to hold great promise for high-power, highfrequency electronics applications, owing to its high breakdown voltage and high saturation current.1,2 This HEMT is operated using a high density two-dimensional electron gas (2DEG) at the AlGaN/GaN interface without the need for any doping due to the spontaneous polarization and piezoelectric properties of this group III nitride heterojunction.. When Fe or C are used for such a highly resistive buffer layer, the use of a thicker, unintentionally doped (UID) GaN layer is necessary for recovery against any deterioration in the device characteristics brought about by the influence of the impurities.. When Fe or C are used for such a highly resistive buffer layer, the use of a thicker, unintentionally doped (UID) GaN layer is necessary for recovery against any deterioration in the device characteristics brought about by the influence of the impurities.13 These impurities or defects cause on-state drain current collapse.. Ti/Al/Ti/Au were annealed at 850 ○C for 30 s
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