Abstract
The fabrication of a memristor device based on various indium zinc oxide (IZO) solution ratios is demonstrated. Titanium oxide (TiO2) thin film is deposited using an atomic layer deposition technique, and then, an IZO thin film is grown on the TiO2 layer with spin‐coating and vacuum annealing at 400 °C. An aluminum (Al)/IZO/TiO2/Al device fabricated with an indium/zinc (In/Zn) solution ratio of 6:4 exhibits high electrical conductivity and excellent cycling stability. The work presented here can provide a new method for exploring the possibility of a high‐performance memristor for electronic applications.
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