Abstract
Chromium layers 800 Å thick are deposited by electron gun evaporation on, respectively, non-implanted, 5×1014 and 5×1015 at./cm2 P+-implanted Si(111) substrates. The redistribution of phosphorus and the influence on chromium silicide growth are analyzed by secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectroscopy (RBS) after annealing between 450° and 550°C. It is shown that chromium silicide formation is retarded or inhibited by the presence of phosphorus. The implant diffuses out of the CrSi2 surface layer in both implantation cases, but also accumulates at the CrSi2/Si interface in the case of the higher dose.
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