Abstract
Chromium/silicon interfaces produced by Cr thin film deposition on Si substrates were ion-beam mixed using Ar+ ions at 3 keV. The ion-beam mixing (IBM) has been studied by means of x-ray photoelectron spectroscopy and factor analysis (FA). FA of the Si 2p and Cr 2p core levels shows that the kinetics of interface formation by IBM is characterized by two stages. During the first stage, a strong decrease in metallic Cr species is observed up to ion doses of ∼1.5 × 1016 ions cm−2, not only due to sputtering but also due to the formation of chromium silicide. The second stage is characterized by a similar evolution of the chromium silicide species related to Cr and Si, respectively, suggesting that the stoichiometry of the chromium silicide formed is nearly constant. Finally, with increasing sputtering time, the signals associated with the silicide slowly decrease, and pure Si0 species begin to appear, since no free metallic chromium atoms are available to react with the unlimited silicon supply from the substrate. The comparison of the experimental results with those obtained from TRIDYN simulations suggests that pure ballistic ion mixing mechanisms alone are unable to explain experimental results, and other radiation-enhanced diffusion mechanisms must be considered to explain the IBM of Cr/Si interfaces by low-energy Ar+ ions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
