Abstract
The properties of silicon-on-insulator films implanted with high hydrogen-ion doses (∼50 at %) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of ∼1000°C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is ∼1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si-Si bond relaxation during ordering.
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