Effect of hydrogenation on transport and magnetic properties in homogeneous amorphous MnxGe1−x:H films

Abstract

Homogeneous amorphous MnxGe1−x:H films were synthesized under thermal nonequilibrium condition by magnetron co-sputtering technology with hydrogen in Ar atmosphere. Compared to the MnxGe1−x films without hydrogen, the MnxGe1−x:H films with hydrogen show higher concentration of hole carriers, larger conductivity, and higher saturation magnetization. Moreover, it was found that the anomalous Hall resistivity is proportional to the perpendicular magnetization. These electrical and magnetic properties indicate that the ferromagnetism of the MnxGe1−x:H films is intrinsic ferromagnetism mediated by the spin-polarized hole carriers.