Abstract
Homogeneous amorphous Fe${}_{x}$Ge${}_{1\ensuremath{-}x}$ (0.3 \ensuremath{\leqslant} $x$ \ensuremath{\leqslant} 0.5) FMS films with a high Fe concentration were synthesized under thermal nonequilibrium condition by magnetron cosputtering. The microstructure, magnetism, electrical transport, and ferromagnetic resonance were systematically studied. The results indicate that Fe${}_{x}$Ge${}_{1\ensuremath{-}x}$ films have intrinsic ferromagnetism with a high Curie temperature and magnetization. The saturation magnetization can be well fitted by Bloch's spin-wave formula in a wide temperature range. Quantitative analysis of electrical transport reveals that Fe${}_{x}$Ge${}_{1\ensuremath{-}x}$ FMS films show conductivity of weakly localized carriers (holes) on the metallic side. Moreover, the anomalous Hall resistivity is proportional to the magnetization for all samples, indicating the carriers are spin polarized and the ferromagnetism is intrinsic. The ferromagnetic resonance further reveals that the Fe${}_{0.5}$Ge${}_{0.5}$ thin films have uniform collective ferromagnetism. Therefore, Fe${}_{x}$Ge${}_{1\ensuremath{-}x}$ ferromagnetic semiconductors with a high Curie temperature and magnetization have potential application in spintronic devices as a highly efficient spin injection source.
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