Abstract
Interaction of hydrogen with Al acceptors in SiC is investigated using low-temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching system. Appearance of H-related PL peaks after hydrogenation is accompanied with a significant reduction in relative intensity of Al bound exciton (Al–BE) PL. A gradual quenching of the remaining Al–BE photoluminescence is observed in hydrogenated samples under excitation with above band gap light, resulting in a complete disappearance of Al–BE PL emission. High-temperature annealing completely restores the shape of the PL spectrum to its prehydrogenation form.
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