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Abstract
The controlled placement of dopant atoms in all three dimensions of a host semiconductor would enable production of a variety of novel devices. We investigate the use of hydrogen adsorption and electron-beam irradiation to achieve selective deposition of Sb on Si. The retention of Sb after annealing to 570 K on a hydrogen-terminated Si(100) surface is enhanced in those areas that have been electron irradiated either before or after exposure to Sb4. The maximum contrast ratio is ≊2:1 for an electron dose of 0.05 C/cm−2.
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