Abstract
The effect of hydrogen termination on Si(100)-2 × 1 surfaces upon Ag deposition at room temperature (RT) and high temperature (350°C) has been investigated by a scanning tunneling microscopy. The results are also compared with those on clean Si(100)-2 × 1 surfaces. When Ag was deposited at RT, small Ag clusters formed on the hydrogen-terminated surface, in contrast that scattered and relatively individual Ag atoms formed on a clean Si(100)-2 × 1 surface. As increasing the substrate temperature, the size of Ag clusters became larger and the shape gradually changed to rectangular, whose edges were parallel to [011] and [01 3 ] directions. Structural models for these surfaces are also proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
