Abstract
The effect of hydrogen peroxide (H 2O 2) concentration in alkaline slurry on the surface micro-roughness of final polished silicon wafer was investigated. The root mean square roughness (RMS) reached minimum with H 2O 2 when the concentration is 0.05 wt%. Meanwhile, the contact angle of the polished surface was decreased to 21°. This decrease was attributed to enhanced chemical reaction in the CMP process. Electrochemical impedance was measured to explore the variation with addition of H 2O 2 in the reaction process of silicon erosion. Based on the measurements, a mechanism was suggested to explain the phenomenon in combine with the coefficient of friction force in the chemical mechanical polishing (CMP) process.
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