Abstract
CuInSe2 thin films have been prepared by selenizing Cu/In metal layers both at 450 °C for 1 h and at 570 °C for 10 min with pure selenium as a selenium vapour source. The H2/N2 volume fraction was varied during the selenization and the effect of H2 in the selenizing atmosphere on the properties of the CuInSe2 films was investigated by analyzing the morphological, structural and compositional changes of the CuInSe2 films.All the selenized CuInSe2 thin films crystalized in a chalcopyrite structure and the gain size of the CuInSe2 films 1 μm thick ranged from 1 to 3 μm. The films had a more (112) preferred orientation and both the a axis and c axis lattice constants increased with increasing amount of hydrogen in the selenizing atmosphere up to 15 vol.%. Also, the resistivity and its activation energy increased significantly as the hydrogen volume percentage in the selenizing atmosphere increased. The compositional analysis showed that the Cu/In ratios decreased with increasing hydrogen volume percentage. The results indicated that the role of hydrogen in the selenizing atmosphere was to reduce the indium loss during selenization, causing increases in the (112) texture, the a axis and c axis lattice constants and the electrical resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
