Abstract
The properties of lanthanum oxide films and lanthanum aluminate films were investigated after dipping the films in DI-water. The La 2O 3 film showed rapid dissolution in DI-water and a swift decrease in thickness resulting in an increased leakage current density. The LAO film showed almost no changes in thickness due to the formation of a layer, preventing dissolution. It was revealed that the changes in the films’ oxygen contents during the hydration process affected the films’ dielectric constants. The LAO films showed better hydration resistance characteristics, which are typically more suitable for conventional semiconductor manufacturing processes.
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