Abstract
For the first time, the effect of hot carrier stress (HCS) on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain (S/D) was studied in detail. After HCS, the extra SiGe S/D mechanical stress deteriorated the hot carrier reliability more by inducing more defects at the interface between the gate oxide and the extension of S/D. However, the SiGe S/D strain did not change the worst HCS condition and the dependence of fT degradation. The fT is still dominated by gm only, even though the Cgs and Cgd have been changed by the SiGe S/D strain.
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