Abstract
The effect of high-temperature annealing in cadmium on the electrical transport properties of n-CdS single crystals has been investigated. It has been found that the mobility values which were measured experimentally were lower than those calculated theoretically using a method based on the Brooks-Herring formula. The discrepancy has been mainly explained by applying the electron-electron scattering correction to the ionised-impurity scattering.
Published Version
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