Effect of High-K Dielectric Material of 14 nm Tri-Layered Strained Silicon Channel HOI FinFET on Short Channel Effect

Abstract

AbstractIn strain technology a twisting in the MOSFET by growing heterostructure bed connected with Si/SiGe/Si layers within the system is working broadly. Developing a tri-layered HOI n-channel FinFET devices at 14 nm gate length which have double strained Si layers and in between strained SiGe with the high-k dielectric material like HfO2, ZrO2 and Si3N4 as gate oxide. The short channel effects like DIBL, Ion/Ioff, threshold voltage, etc. have been analyzed for better performance through changing the SiO2 as gate oxide with the different high permittivity materials such as HfO2, ZrO2 and Si3N4. This paper explores it considering equivalent oxide thickness calculation and optimized using SILVACO TCAD software. Also compare it with SiO2 SOI structure for both drain current and transconductance of FinFET and the result in both the drain current and transconductance are higher than SiO2 SOI device when biased in the linear region. And DIBL, Ion/Ioff are also developed by incorporating the high-k materials.KeywordsHOIHigh-K dielectricSILVACO TCADEOTStrained silicon