Abstract
We investigate the effect of high temperature Post-Deposition Annealing of Al 2O 3 on the tunnel oxide of TANOS-like non-volatile memories. We found that, when temperature steps above 850 °C are applied after the stack deposition, a transition layer is forming by the intermixing of the Si 3N 4 with the upper part of the underneath SiO 2. We found that this transition layer has worse dielectric properties as compared to SiO 2, altering in a not-negligible way the performance of TANOS memories, and in particular severely penalizing retention.
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