Abstract
Transparent and conducting HfxZn1-xO thin films with nominal Hf doping concentration (x = 0–7%) were successfully synthesized on flexible polyimide (PI) substrates by the sol-gel spin coating method. All films showed hexagonal wurtzite structure of ZnO with preferred orientation of c-axis after air and vacuum annealing. The minimum resistivity reached to as low as 6.3 × 10-2 Ω cm after annealed in vacuum atmosphere with 3% Hf content. The carrier concentration increased from 1018 cm-3 to 1019 cm-3, while Hall mobility decreased from 23 cm2v-1s-1 to 3 cm2v-1s-1 with increasing Hf concentration. According to the SEM and XPS analysis, for x = 0–3%, grain boundary scattering was the major factor of mobility, while for x = 5–7%, besides the grain boundary scattering, ionized impurity and natural scattering also play a crucial role in the variation of mobility. The minimum resistivity was due to the competition of increasing carrier concentration and decreasing mobility.
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