Abstract
The influence of heteroepitaxial passivation of the surfaces of GaAs layers by a deposition of thin layer of In0.5Ga0.5P on the photomagnetic effect spectra, the barrier photoconductivity, and the capacitor photovoltage in GaAs is investigated. An increase in the surface recombination rate and the anomalous drift component of the photomagnetic effect with growth of the absorption coefficient in the region of strong absorption was observed. The influence of these effects on the photosensitivity spectra has been elucidated. The possibility of using photoelectric techniques to determine the recombination parameters of thin GaAs layers is demonstrated.
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