Effect of diffusion length and surface recombination on the polarization quantum efficiency of anisotropic crystals

Abstract

The formulas were derived and numerical analysis was carried out of the dependences of the polarization quantum efficiency Qp and polarization photocurrent difference Δi in a homogeneous anisotropic crystal on the diffusion length L and surface recombination rate s1. The polarization photoconductivity was considered in the region of both weak and strong optical absorption. The trends of Qp(L) and Qp(s1) were shown to move in opposite directions. These curves are descending for small absorption factors α and ascending for high α. The limiting cases of zero, small, and high surface recombination rates were considered for Qp(L). The dependences were analyzed using the typical parameters of II-IV-V2 ternary diamond-like semiconductors.