Abstract
Formulas were derived and numerical analysis was carried out for the dependences of photopleochroism coefficient P i of the homogeneous anisotropic crystal on the diffusion length L and surface recombination rate. The polarization photoconductivity was considered in the region of both weak and strong optical absorption. The spectral contour of photopleochroism was shown to follow the optical dichroism curve at weak absorption and deviated from it or even reversed in sign in the case of appreciable recombination of charge carriers at the crystal surface at strong absorption. The limiting cases of zero and high surface recombination rates were considered for the dependence of the photopleochroism coefficient on the diffusion length. The dependences were analyzed by using the typical parameters of II-IV-V2 ternary diamond-like semiconductors.
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