Abstract
Using high-accuracy in situ curvature measurement during growth of InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) by metal organic vapor phase epitaxy (MOVPE), we have successfully clarified the effect of hetero-interfaces on strain control in InGaAs/GaAsP strain-balanced MQWs. By analyzing curvature transients and X-ray diffraction (XRD) fringe patterns, we found that an inadequate gas-switching sequence induces unintended atomic content at the interfaces between InGaAs and GaAsP and then influences the average strain of the structure. Through considering the atomic characteristics and measuring the reflectance anisotropy transient during growth, it has been revealed that the optimized stabilization time for arsenic and phosphorus mixture before GaAsP barrier growth should be longer than 3s at 610°C.
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