Abstract
The crystallization of the amorphous Ge 2 Sb 2 Te 5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy E A of the crystallization is 2.34 eV at slow heating rates below 40°C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.
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