Abstract
Single crystals of ZnS x Se 1− x were grown by chemical vapour transport method using iodine as a transporting agent in a closed evacuated quartz ampoule. The structure of the grown crystals was confirmed using powder X-ray diffractometer. Then they were annealed at different elemental (Zn, Se) atmospheres at 600 °C for about 24 h. As grown crystal platelets were irradiated with high-energy Si ion irradiation. The room temperature photoluminescence studies were carried out. The bands correspond to SA emission and defects were obtained.
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