Abstract
The growth of a low-temperature polycrystalline silicon (LTPS) thin film on a flexible polyethylene terephthalate (PET) substrate under the assistance of helium plasma has been examined in detail in this study. By utilizing the plasma enhanced chemical vapor deposition method, LTPS thin films are directly deposited on a PET substrate at a relatively low temperature (80 °C), and the variations in the morphology, structure, and electrical property of the samples with He flow are systematically characterized by performing a series of tests. The results show that the purely helium-diluted silane plasma has the function of inducing crystallization and fabricating the c-Si network. After optimizing the He flow rate to 600 SCCM, the LTPS thin film with the largest average grain size of ∼204.7 nm can be obtained, while the maximum dark conductivity (4.16 × 10−5 S/cm) is also achieved. Finally, a detailed discussion is presented to illustrate the growth mechanism of the LTPS thin film in He plasma.
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