Effect of Growth Time on Thickness of InAlN/GaN Heterostructures Grown by MOCVD

Abstract

In this paper, InAlN epilayers were grown on the GaN/sapphire templates using metal-organic chemical vapour deposition (MOCVD) at 800 °C by varying the growth time. The variation in growth time is believed to be directly proportional to the thickness. The In composition and change in thickness of the InAlN epilayers are found by High Resolution X-Ray Diffraction (HRXRD). The roughness of InAlN epilayers decreases with increase in thickness of the epilayers, which was found using Atomic Force Microscopy (AFM). Room temperature Photoluminescence (PL) from InAlN exhibits GaN (362 nm) peak and yellow luminescence (YL) for lesser thickness which is found to be suppressed with increase in thickness of the epilayers. The optical band edge of InxAl1−xN ternary alloy was estimated by optical absorbance.