Abstract
The AlN Nucleation layers (NLs) with different thickness under very high V/III ratio (∼5000) growth conditions were grown on 4H-SiC by metal organic chemical vapor deposition (MOCD). The thickness of the NLs were varied between 10 and 300 nm. Growth mechanism was investigated by atomic force microscopy and high-resolution X-ray diffraction measurements. The crystalline, surface qualities and relaxation of the AlN were found to closely depend on the thickness of the AlN epi-layers. AlN NL with 100 nm thickness were found to have lower RMS (root mean square) roughness of ∼ 0.5 nm with smoother surface morphology and improved interface and crystalline quality. It was also observed that relaxation changed from 30 to 65 percent when the thickness was changed from 40 to 300 nm, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
