Abstract
Homoepitaxial diamond (100) and (111) films were grown side by side in a hot filament reactor at 875 °C with and without oxygen. The growth rates and surface morphologies were monitored by in situ Fizeau interferometry and atomic force microscopy, respectively. Penetration twins were observed on the (100) surface at a low (100)-to-(111) growth-rate ratio but not at a high value, as expected. Surprisingly, penetration twins were not observed on the (111) surfaces, which were dominated by contact twins in both cases. Implications of these results for microstructural control of diamond films and the effect of oxygen additions are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
