Abstract
AbstractThe effect of growth conditions on the luminescence properties of ZnO films grown on a-Al2O3/GaN(0001)/c-Al2O3 templates by plasma-assisted molecular beam epitaxy has been investigated. We observed that the deflecting of the ions produced by the RF oxygen plasma away from substrate results in improved excitonic emission and modification of the defect-related PL spectrum. The intensity of the near-band-edge lines in photoluminescence spectra from the layers grown with the ion deflector deflection was found to increase as compared to the controls grown without the ion deflector. The yellow-green spectral range was dominated by different defect bands in the films grown with and without ion deflection. The effect of RF power on peak positions of the defect band was studied for the films grown without ion deflection.
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