Abstract
ZnO thin films were grown on porous silicon by plasma-assisted molecular beam epitaxy. Thermal annealing was then carried out at various temperatures in the range from 500 to 700 °C for 10 min. Atomic force microscopy, scanning electron microscopy, X-ray diffraction, and photoluminescence were carried out to investigate the effects of the annealing temperature on the properties of the ZnO thin films. The ZnO thin films exhibit a mountain-range-like surface. With increasing annealing temperature, the grain size increased and the residual stress decreased. The activation energy of the free exciton (FX) emission from the ZnO thin films was found to be about 32 meV and the fitting parameters in Varshni's empirical equation were α= 2×10-3 eV/K and β= 1200 K. The photoluminescence (PL) intensity ratio of near-band-edge emission to deep-level emission of the ZnO thin films increased with increasing annealing temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
