Abstract
AlN crystals are one of the representative III-V group semiconductor materials. AlN has good electric field characteristics, thermal conductivity and thermal stability. Owing to its wide direct band gap of 6.2eV [1], it can achieve a luminescent wavelength of 210 nanometers in deep ultraviolet, which is an ideal material for UV and deep UV LED devices. But preparation of AlN crystals with PVT for growing conditions demanding, 0.3-0.5 atm of high purity nitrogen atmosphere of growth and the growth of 2100-2400 K temperature [2, 3]. In this paper, two kinds of growth chamber structures are designed and compared. In order to ensure that the temperature gradient between the source material surface and the seed surface satisfy the crystal growth and keep stability in the larger transverse region, [4, 5] the crystal grown on the seed crystal can get better quality.
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