Abstract
The effect of growth interruption times combined with selective group-V species exposure of InGaAs/AlAsSb short-period superlattice structure was investigated with photoluminescence, X-ray diffraction, reflection high-energy electron diffraction. X-ray data show no superlattice structural dependence on the used growth treatment. While reflection electron diffraction patterns strongly depend on the exposure time and species type exposure. A shift in the photoluminescence peak position from samples grown under different species type exposure is observed. The samples with Sb- and As-terminated interfaces, respectively, indicate lower- and higher-energy peaks compared to the ones grown without interruption. This is interpreted in terms of increased incorporation of Sb in the InGaAs layer that leads to a change in the quantum well profile.
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