Effect of gravitation vector orientation relative to the solidification front on the micro- and macrohomogeneity of semiconductor crystals grown under terrestrial and space conditions

Abstract

The influence of gravitation vector orientation relative to the solidification front on the dopant distribution micro- and macrohomogeneity in vertical oriented crystallization of highly Ga-doped Ge crystals has been investigated using computer simulation. The deviation of the axis for crystal growth relative to the g0 vector, when a free surface of the melt is present, has been found to provide the formation of striations with a reduced dopant concentration. The influence of the solidification rate, convective and diffusion mass flows on the dopant distribution macrohomogeneity has been investigated.