Abstract
The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.
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