Abstract
Amorphous silicon was deposited on SiO2 in ultrahigh vacuum and annealed for 8 h at 600 °C in a nitrogen atmosphere. Transmission electron microscopy shows a columnar structure of polycrystalline silicon with the average grain size of 2.5 μm. Boron doses of 3×1013–6×1014 cm−2 were implanted at 30 keV into those films and annealed for 20 min at 950 °C. Hall and resistivity measurements show that the carrier concentration was 100% of the doping concentration and the hole mobility was 20–60 cm2/V s. It was also found that the dependence of hole mobility on carrier concentration is in good agreement with that for the fine grain polycrystalline silicon.
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