Abstract
Impurity accumulation at the grain boundaries in multicrystalline Si (mc-Si) was investigated by in situ observation of the crystal/melt interface, analysis of the grain boundary characteristics, and measurement of impurity concentrations. The impurity concentration was higher at grain boundaries that formed a groove at the crystal/melt interface than that at regions which did not form a groove at the crystal/melt interface. We conclude that groove formation at the crystal/melt interface is the cause of impurity accumulation at the grain boundary.
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