Abstract
Compact MOSFET models in contemporary circuit simulators fail to accurately describe distortion effects. In the ohmic region of the MOSFET, this failure is mainly due to inaccurate modeling of the gate-field dependent mobility degradation effect. In this paper a new model for mobility degradation Is introduced which gives a major improvement in distortion analysis in the linear region for both n-type and p-type MOS transistors. Incorporating a gate voltage dependent series resistance, this model even gives good results for very short channel length devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
