Effect of Gamma Ray Irradiation on Epitaxial Pb(Zr,Ti)O3 /SrRuO3 Tunable Varactor Devices

Abstract

Epitaxial morphotropic PbZr0.52Ti0.48O3 (PZT) thin films were employed to enhance the dielectric tunability of microwave filter devices without compromising the device impedance matching and low bias voltage (<10 V) requirements. Epitaxial heterostructure of ferroelectric PZT(001)/SrRuO3 (SRO) were grown on single crystal SrTiO3 (001) substrates by pulsed laser deposition, and a platinum (Pt) electrode was deposited on top of the PZT film. The tunability of the Pt/PZT/SRO varactor devices are strongly dependent on bias voltage and exhibited good dielectric tunability of 55% at 100 kHz and 10 V. The capacitance (CP) of the heteroepitaxial varactor devices was 105 pF at 10 V applied bias with a corresponding small leakage current of 1 nA. The influence of gamma (γ-ray) irradiation on the intrinsic electrical properties of the epitaxial PZT varactor devices was investigated as a function of the irradiation dose from 0 kGy to 400 kGy, in terms of the capacitance–voltage (C–V) characteristics and loss tangent response. With enhancing γ-ray irradiation doses the ferroelectric capacitance was found to decrease accompanying degradation in the loss tangent values. The results indicate that tunability of the epitaxial PZT ferroelectric thin-film capacitors decreased with increasing gamma irradiation dose and degraded ∼25% at 400 kGy dose than unexposed devices. Possible reasons for the degradation behavior of dielectric properties and tunability due to radiation-induced defects has been discussed.