Abstract
A hetero-epitaxial Au/PbZr0.48Ti0.52O3(PZT)/SrRuO3(SRO) capacitor was fabricated on a single crystal SrTiO3 (STO) substrate by pulsed laser deposition. An SRO buffer layer (a nucleation layer) was formed at the SRO/STO interface to ensure the highly epitaxial growth of the PZT and SRO films. An X-ray diffraction measurement revealed that the (00l) planes of the PZT and SRO grew parallel to the substrate surface. A transition layer of ∼ 5 nm thickness was observed at the SRO/STO interface by high-resolution transmission electron microscopy (HR-TEM). This transition layer corresponds to the nucleation layer intentionally grown at the interface. Remanent polarization of the capacitor was 32.1 μC/cm2 due to the good epitaxial growth of the films.
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