Abstract
The results of studies of the structural feature and the effect of low-dose gamma irradiation (up to 105 rad) on the photoconductivity relaxation and the spectral photosensitivity of pSi-nSi1 − xSnx (0 ≤ x ≤ 0.04) structures are described. It is shown that exposure to radiation leads to an increase in the relaxation time constant from 55 to 83 μs and an enhancement in the sensitivity of the structures in the short-wavelength emission spectrum, which is attributed to the radiation-stimulated gettering of crystal lattice defects localized in the near-boundaries regions between Si1 −xSnx subcrystallites and Si1 − xSnx-Sn and Si1 − xSnx-SiO2 phases.
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