Abstract
The photoluminescence (PL) is used to study the capped InAs quantum dot (QD) single sheet array MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction by 0°, 2°, 4°, 6°. The misorientation leads to the blue shift and the narrowing of InAs QD PL lines and makes PL efficiency higher. These effects are related, respectively, with the smaller size and higher size uniformity of the InAs QDs and reduction of the number of large InAs islands on the misoriented surfaces. It was found that the decrease of the growth interruption time between the end of QDs’ growth and the start of the GaAs layer overgrowth makes these modifications of the PL spectra with surface misorientation stronger and the efficiency of the PL higher. With the use of misoriented substrates, single sheet QD laser with threshold current density of 210 A/cm 2 at room temperature was realized.
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