Abstract
In this paper, an InGaAs-based tunneling field-effect transistor (TFET) with gate-all-around channel is designed and its performances are investigated by rigorous device simulations. The simulation results show that the schemed TFET device shows improved dc characteristics including smaller subthreshold swing (S) and higher on-state current (Ion) in comparison to conventional TFETs. Device performances have been closely investigated by changing Ga fraction (x) in the In1−xGaxAs source-side channel region. Further, the dependences of radio-frequency (RF) performances including cut-off frequency (fT), gate-source capacitance (Cgs) with the schemed TFETs are examined as the source-channel length (Lsc) is scaled at different Ga fractions. The InGaAs TFET device shows superior dc and RF performances with optimized Ga fraction and geometric dimensions.
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