Abstract
The benefit of free carriers on ac-driven electroluminescence (EL) in hydrogenated amorphous silicon carbide (a-SiC:H) thin films has been investigated by observing the photoenhanced EL and analyzing of EL in multilayers. The EL intensity was found to be increased with the intensity of the illuminating laser with a sub-band gap energy. This has been correlated with photoluminescence quenching. The EL quenching at higher electric fields observed only with irradiation has been attributed to the effect of a combination of an increased number of free carriers and interaction of impact-generated electron-hole pairs. Moreover, the reduction in the threshold voltage of a-SiC:H/hydrogenated amorphous carbon (a-C:H) multilayers has been found to be related to the a-SiC:H thickness. The slope of the linear increase in EL intensity with ac voltage depends on the multilayer sequence. Both observations can be explained using a microscopic model based on impact excitation by free carriers.
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