Effect of fluorine-ion implantation on buried nitride silicon-on-insulator structures

Abstract

Effect of fluorine-ion (19F+) implantation on the buried silicon nitride silicon-on-insulator (SOI) structures was investigated. Fluorine was introduced before and after the synthesis of buried Si3N4 layers in silicon by high-dose nitrogen ion (14N+) implantation. Infrared transmission spectropscopy and glancing angle x-ray diffraction studies show that 19F+ implantation before SOI synthesis inhibits the growth of larger-size polycrystalline Si3N4 grains, whereas after the synthesis it removes undesired polycrystalline silicon and helps to obtain larger-grain-size α-polycrystalline silicon nitride in few preferred planes.