Abstract
The aim of the present work is to prepare transparent and conductive tin oxide film using an inexpensive method. The effect of different doping levels of fluorine (from 0 to 120 at.%) is ascertained and post heat treatment is carried out. Films are also investigated as a function of concentration of tin precursor (0.1–1.6 M SnCl 4). The electrical and optical properties of the films with different concentrations of tin tetrachloride are discussed. The sheet resistance of the film deposited at 450°C decreases by increasing the concentration of SnCl 4. It is also found that the film has a transparency of about 80%, which makes it suitable for different applications. The optimized SnO 2:F atomic percent ratio films produced a sheet resistance of 0.3×10 3 ohm/□). The X-ray diffraction patterns showed that the preferred orientation is [200], but it changes to [301] for heat-treated films.
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