Abstract
Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.
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